solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet features: ? low-level gate characteristics ? i gt = 200 a (max) @ 25 o c ? low holding current i h = 1 ma (max) @ 25 o c ? anode common to case ? hermetically sealed ? tx, txv, s-level screening available. consult factory sfs1826 thru sfs1829 1.6 amps 200 400 volts silicon controlled rectifier maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage sfs1826 sfs1827 sfs1828 sfs1829 v drm v rrm 200 250 300 400 volts non-repetitive peak reverse blocking voltage (t < 5.0 ms) sfs1826 sfs1827 sfs1828 sfs1829 v rsm 300 350 400 500 volts rms on-state current (all conduction angles) i t (rms) 1.6 amps average on-state current t c = 50 o c t a = 25 o c i t (av) 1.0 0.7 amps peak non-repetitive surge current (one cycle, 60 hz, t c = 80 o c ) i tsm 15 amps peak gate power p gm 0.1 watts average gate power p g (av) 0.01 watts peak gate current i gm 0.1 amps peak gate voltage v gm 6.0 volts operating junction temperature range t j -65 to +200 o c storage temperature range tstg -65 to +200 o c thermal resistance, junction to case r jc 72 o c/w
electrical characteristics symbol min max unit peak reverse blocking current (rated v rrm ) i rrm ?? 1 a peak forward blocking current (rated v drm , r gk = 1k ? ) i drm ?? 1 a peak on-state voltage (i f = 1.6 a peak) v tm ?? 1.3 volts gate trigger current (v d = 6 v dc , r l = 100 ? , t c = 125 o c) (v d = 6 v dc , r l = 100 ? , t c = -65 o c) i gt ?? ?? 200 350 a gate trigger voltage (v d = 6 v dc , r l = 100 ? , t c = 25 o c) (v d = 6 v dc , r l = 100 ? , t c = -65 o c) v gt ?? ?? 0.7 0.9 volts holding current (v d = 6 v dc ) (v d = 6 v dc , t c = -65 o c) i h ?? ?? 0.3 2.0 ma notes: 1 / rgk current is not included in measurement. 2 / thyristor devices shall not be tested with a constant current source for forward and reverse blocking capability such that th e voltage applies exceeds the rated blocking voltage. 3 / thyristor devices shall not have a positive bias applied to th e gate concurrently with a negative potential applied to the an ode. 4 / unless otherwise specified, all electrical characteristics @ t c = 25 o c, r gk = 1k ? . available part numbers: sfs1826/18; sfs1827/18; sfs1828/18; sfs1829/18 pin assignment (standard) package cathod e gate anode to-18 (/18) pin 2 pin 3 pin 1 *for information on curves, contact the fact ory representative for engineering assistance. note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: SCR005a doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sfs1826 thru sfs1829
|
